Verfahren zur Durchführung von Extrem-Ultravioletter (euv)-Lithografie

Details

Veröffentlichungs-Nr.

EP3258317

Aktenzeichen

EP16174808

Anmeldetag

16. Juni 2016

Veröffentlichung

19. Januar 2022

Erteilung

19. Januar 2022

Rechtsraum

EP

IPC

G03F7/00G03F7/075G03F7/09

Abstract

A method for performing an extreme ultraviolet (EUV) photo-lithographic processing, the method comprising obtaining a substrate to be patterned having an upper main surface, providing an EUV photoresist layer on the upper main surface, and forming at least one opening in the EUV photoresist layer, wherein the method further comprises, providing, sandwiched between the EUV photoresist layer and the upper main surface, a multi-layer stack having an upper surface and consisting of a first layer of a first material and a second layer of a second material, wherein the materials have a different refractive indexes, and the layers are stacked alternately and repeatedly on one another, and wherein the at least one opening exposes a part of the upper main surface of the multi-layer stack.

Anmelder

Firmen

IMEC VZW
Katholieke Universiteit Leuven

Land

🇧🇪 Belgien

Fachgebiete