Halbleiterbauelement mit einer Aktiven, von einem Internen Feld Abgeschirmten Region

Details

Veröffentlichungs-Nr.

EP3373343

Aktenzeichen

EP17160160

Anmeldetag

9. März 2017

Veröffentlichung

15. September 2021

Erteilung

15. September 2021

Rechtsraum

EP

IPC

H01L33/06H01L33/16H01L33/32// H01L33/00H01L33/04H01L33/20

Abstract

A semiconductor device comprises a layer sequence formed by a plurality of polar single crystalline semiconductor material layers that each has a crystal axis pointing in a direction of crystalline polarity and a stacking direction of the layer sequence. A core layer sequence is formed by an active region made of an active layer stack or a plurality of repetitions of the active layer stack. The active layer stack has an active layer having a first material composition associated with a first band gap energy, and carrier-confinement layers embedding the active layer on at least two opposite sides thereof, having a second material composition associated with a second band gap energy larger than the first band gap energy. A pair of polarization guard layers is arranged adjacent to the active region and embedding the active region on opposite sides thereof.

Anmelder

Firma

Technische Universität Berlin

Land

🇩🇪 Deutschland

Fachgebiete