Aus Einkristallsilicium Hergestellter Halbleiter-Wafer und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP3428325

Aktenzeichen

EP17180551

Anmeldetag

10. Juli 2017

Veröffentlichung

11. September 2019

Erteilung

11. September 2019

Rechtsraum

EP

IPC

C30B15/04C30B15/20C30B29/06H01L21/322// C30B25/20

Abstract

A semiconductor wafer made of single-crystal silicon with an oxygen concentration as per new ASTM of not less than 4,9 x 10<17>atoms/ cm<3>and of not more than 6,5 x 10<17>atoms/cm<3>and a nitrogen concentration as per new ASTM of not less than 8 x 10<12>atoms/cm<3>and not more than 5 x 10<13>atoms/cm<3>, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer made of silicon, wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is 13 to 35 nm and whose mean density is not less than 3 x 10<8>cm<-3>and not more than 4 x 10<9>cm<-3>, determined by IR tomography.

Anmelder

Firma

Siltronic AG

Land

🇩🇪 Deutschland

Fachgebiete