Gesundheitsüberwachung eines Leistungshalbleiterbauelements

Details

Veröffentlichungs-Nr.

EP3492935

Aktenzeichen

EP17306688

Anmeldetag

1. Dezember 2017

Veröffentlichung

11. August 2021

Erteilung

11. August 2021

Rechtsraum

EP

IPC

G01R31/26G01R31/27G01R31/327

Abstract

A method to establish a degradation state of electrical connections in a power semiconductor device (1) comprising: - measuring at least two voltage drop values under two respective current values for the same temperature value. The two current values are strictly different or the measurements are made under two distinct gate levels (G) of a transistor; - saving the measured values as calibration data; - monitoring operational conditions of said power semiconductor device; - measuring at least two voltage drop values under respective same current values as preceding, and at two respective moments during which the monitored operational conditions corresponding to two respective predefined sets of criteria related to states of operation and to a common temperature; - saving the at least two values as operational data; - calculating a numerical index in a manner to estimate a degradation state of said power semiconductor device (1).

Anmelder

Firmen

Mitsubishi Electric R&D Centre Europe B.V.
Mitsubishi Electric Corporation

Land

🇳🇱 Niederlande

Fachgebiete