Schützen eines Substratbereichs Während der Herstellung eines Fet-Sensors

Details

Veröffentlichungs-Nr.

EP3502681

Aktenzeichen

EP17209212

Anmeldetag

21. Dezember 2017

Veröffentlichung

14. Februar 2024

Erteilung

14. Februar 2024

Rechtsraum

EP

IPC

G01N27/414// H01L29/66

Abstract

A method for forming an intermediate (100) in the fabrication of a field-effect transistor sensor, the method comprising:a. providing a substrate having a substrate region (210) comprising a gate dielectric (211) thereon and optionally a nanocavity therein (212),b. providing a sacrificial element (310) over the substrate region (210),c. providing one or more layers (400) having a combined thickness of at least 100 nm over the sacrificial element (310),d. opening an access (500) to the sacrificial element (310) through the one or more layers (400), ande. optionally selectively removing the sacrificial element (310), thereby opening a sensor cavity (300) over the substrate region (210);wherein the sacrificial element (310) is removable by oxidation and wherein, if step e is performed, selectively removing the sacrificial element (310) comprises an oxidative removal.

Anmelder

Firma

IMEC vzw

Land

🇧🇪 Belgien

Fachgebiete