Fet-Sensor mit Nanopore mit Nichtlinearem Potentialprofil

Details

Veröffentlichungs-Nr.

EP3502688

Aktenzeichen

EP17210422

Anmeldetag

22. Dezember 2017

Veröffentlichung

13. November 2019

Erteilung

13. November 2019

Rechtsraum

EP

IPC

G01N33/487

Abstract

In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprising i. a source region (310) and a drain region (320), defining a source-drain axis; ii. a channel region (330) between the source region (310) and the drain region (320); iii. a nanopore (400) through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.

Anmelder

Firma

IMEC vzw

Land

🇧🇪 Belgien

Fachgebiete