In ein Gehäusesubstrat Integrierte Passive Dünnschichtvorrichtungen

Details

Veröffentlichungs-Nr.

EP3506348

Aktenzeichen

EP18209021

Anmeldetag

28. November 2018

Veröffentlichung

24. November 2021

Erteilung

24. November 2021

Rechtsraum

EP

IPC

H01L23/498H01L23/50H01L21/48

Abstract

An apparatus is provided which comprises: one or more first conductive contacts on a first surface, one or more second conductive contacts on a second surface opposite the first surface, a dielectric layer between the first and the second surfaces, and an embedded capacitor on the dielectric layer conductively coupled with one of the first conductive contacts, wherein the embedded capacitor comprises a first metal layer on the dielectric layer, a thin film dielectric material on a surface of the metal layer, a second metal layer on the surface of the first metal layer, and a third metal layer on the thin film dielectric material.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA

Fachgebiete