2SPL Patentanwälte PartG mbB

A mounting device (100) is provided which is suitable for arranging a display (110) above an operating table (120), the mounting device further comprising a movable cart (130) suitable for extending transversely under the operating table and an arm (140) suitable for extending next to the operating table, at least one input interface (410) configured to receive data indicating a target position or movement direction of the display relative to a microscope or relative to a user of the microscope, an actuator (420) and control circuitry (430) configured to control the actuator to move at least a display mounting structure of the mounting device for adjusting a position of the display based on the data.

Provided is an apparatus (100) for determining an initial opening degree for a valve (175) regulating the supply of hydraulic fluid to a slewing drive (180) of a lifting device (150) to initiate a slewing motion of a crane arm of the lifting device. The apparatus comprises processing circuitry (110) configured to receive first input data (101) indicating an inclination measured at the lifting device. Additionally, the apparatus is configured to receive second input data (102) indicating a measured pressure in a hydraulic cylinder (165) of the crane arm (160). The apparatus is additionally configured to determine the initial opening degree for the valve based on the first and second input data.

Provided are methods, computer programs, and apparatuses for providing services of multiple generations of telecommunication systems. The method (10) for providing services of multiple generations of telecommunication systems comprises enabling (11) services of a first telecommunication system, wherein the first telecommunication system supports network slicing and wherein the network slices are configurable to pro-vide different service characteristics and supporting (12) a second telecommunication system, the second telecommunication system being a different generation of telecommunication systems than the first telecommunication system. The first telecommunication system being configured to provide access to at least one feature of the second telecommunication system using at least one network slice.

Provided is a concept for selectively applying cryptographic processing to user plane (UP) traffic in a telecommunication network. It includes receiving cryptographic policy information indicative of cryptographic policies for at least one portion of UP traffic. It includes determining, based on the cryptographic policy information, whether to apply cryptographic processing to the at least one portion of the UP traffic. The cryptographic processing comprises at least one of encryption or integrity protection. Further, the proposed concept includes selectively applying the cryptographic processing to the portion of the UP traffic at a granularity of at least one of an interface, a tunnel, a protocol data unit (PDU) session, or a quality-of-service (QoS) flow

Techniques are provided herein to form semiconductor dies with a thermally conductive bond interface to enhance the thermal dissipation from the semiconductor devices. A frontside interconnect region is provided above a semiconductor device layer to, for example, route signals between various semiconductor devices in the device layer. A thermally conductive bond layer may be provided above the frontside interconnect region, such as on a top-most layer of the frontside interconnect region. The thermally conductive bond layer includes a metal such as titanium, ruthenium, copper, or generally any material having a thermal conductivity of at least 1.5 W/m·K. The bond layer may be formed on a material layer that is deposited first on the frontside interconnect region. The material layer may be any of diamond, silicon carbide, copper, or aluminum nitride, to name a few examples.

The present disclosure relates to a first network node in a communication network. The first network node comprises processing circuitry configured to receive a status update message from a second network node in the communication network. The processing circuitry is further configured to decide whether to forward the status update message to at least one third network node in the communication network based on at least one forwarding criterium. The processing circuitry is further configured to decide whether to process the status update message based on at least one processing criterium.

Bridge die interposer packages, and related apparatuses, systems, and techniques are discussed. An interposer package includes a bridge die having a routing structure to interconnect multiple integrated circuit (IC) dies of the package. Power is provided to the IC dies by a mesh power supply metallization and a mesh ground metallization that extend from outside a perimeter of the bridge die to within the perimeter and over the routing structure. The bridge die may be absent through silicon vias (TSVs) and may be hanging such that it is exposed at the bottom of the package.

Integrated circuit structures having uniform grid metal gate and trench contact placeholder cut and non-selective fin trim isolation (FTI) are described. For example, an integrated circuit structure includes a vertical stack of horizontal nanowires or a fin. A gate structure is over the vertical stack of horizontal nanowires or the fin. A dielectric structure is laterally spaced apart from the gate structure. The dielectric structure is not over a channel structure. A dielectric gate cut plug is laterally between and in contact with the gate structure and the dielectric structure. The dielectric structure has an uppermost surface above an uppermost surface of the dielectric gate cut plug.

Transistor structures with silicon source and drain semiconductor material that is protected from a backside silicon subfin material removal process by an intervening barrier material layer. A source/drain barrier material layer may comprise a crystalline material, such as SiGe, grown on the subfin prior to growth of the source/drain material. Optionally, a growth mask may be deposited over channel material before growing source/drain barrier material layer to avoid a heterojunction between channel and source/drain semiconductor materials. Alternatively, a source/drain barrier material layer may comprise an amorphous dielectric material deposited on the subfin prior to growth of the source/drain material. Following frontside processing, a workpiece may be inverted and subfin material removed selectively over the source/drain barrier material layer.

Transistor structures with a dielectric trench plug below source and drain semiconductor material. Following frontside processing, a workpiece may be inverted and backside interconnect metallization fabricated. The dielectric trench plug can electrically insulate the backside interconnect metallization from source and drain semiconductor material. In some examples, a dielectric trench plug is formed during frontside processing, backfilling a trench in subfin semiconductor material prior to the deposition of source and drain semiconductor material. In other examples, a dielectric trench plug is formed during backside processing. When source or drain semiconductor material is exposed with a backside planarization polish, a recess may be etched in the exposed semiconductor material and the recess backfilled with the dielectric trench plug.