Halbleitergehäuse und Verfahren zur Herstellung eines Halbleitergehäuses

Details

Veröffentlichungs-Nr.

EP3531447

Aktenzeichen

EP19158864

Anmeldetag

22. Februar 2019

Veröffentlichung

21. August 2024

Erteilung

21. August 2024

Rechtsraum

EP

IPC

H01L21/78H01L23/00H01L27/088H01L21/683H01L23/31H01L21/56

Abstract

In an embodiment, a semiconductor package comprises a first transistor device comprising a first surface and a second surface opposing the first surface, a first power electrode and a control electrode arranged on the first surface and a second power electrode arranged on the second surface. The semiconductor package further comprises a first metallization structure arranged on the first surface, the first metallization structure comprising a plurality of outer contact pads, the outer contact pads comprising a protective layer of solder, Ag or Sn, a second metallization structure arranged on the second surface, a conductive connection extending from the first surface to the second surface and electrically connecting the second power electrode to an outer contact pad of the first metallization structure, and a first epoxy layer arranged on side faces and on the first surface of the transistor device, the first epoxy layer comprising openings defining the lateral size of the outer contact pads and a package footprint.

Anmelder

Firma

Infineon Technologies Austria AG

Land

🇦🇹 Österreich

Fachgebiete