Halbleiterbauelement mit Eingebetteter Poröser Region und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP3556910

Aktenzeichen

EP18305492

Anmeldetag

20. April 2018

Veröffentlichung

4. Oktober 2023

Erteilung

4. Oktober 2023

Rechtsraum

EP

IPC

C25D11/04C25D11/26C25D11/08C25D11/12C25D11/24C25D11/02C25D11/18H01G4/33

Abstract

A semiconductor device and a method of fabrication thereof are disclosed. The semiconductor device includes a porous anodic region for embedding a structure. The porous anodic region is defined by a ductile hard mask. The ductility of the hard mask reduces the potential for the hard mask to crack during the formation by anodization of the porous anodic region. The ductile hard mask may be a metal. The metal may be selected to form a stable oxide when exposed to the anodization electrolyte thereby enabling the hard mask to self-repair if a crack occurs during the anodization process.

Anmelder

Firmen

Murata Manufacturing Co., Ltd.
Commissariat à l'énergie atomique et aux énergies alternatives

Land

🇯🇵 Japan

Fachgebiete