Mikron-Grösse von Konstruktionen von Lichtemittierenden Dioden

Details

Veröffentlichungs-Nr.

EP3565010

Aktenzeichen

EP18204692

Anmeldetag

6. November 2018

Veröffentlichung

23. März 2022

Erteilung

23. März 2022

Rechtsraum

EP

IPC

H01L33/20H01L33/38H01L33/40// H01L33/10

Abstract

A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

Anmelder

Firma

Facebook Technologies, LLC

Land

🇺🇸 USA

Fachgebiete