In-Line-Schutz vor Prozessbedingter Beschädigung von Dielektrika
Anmelder: NXP B.V. 🇳🇱
Details
- Veröffentlichungs-Nr.
- EP3608949
- Aktenzeichen
- EP18188287
- Anmeldetag
- 9. August 2018
- Veröffentlichung
- 24. Februar 2021
- Erteilung
- 24. Februar 2021
- Rechtsraum
- EP
- IPC
- H01L21/768H01L23/525H01L23/60
Abstract
A method of protecting a dielectric during fabrication is provided. A conductive layer is patterned to form a first conductive shape on a first portion of a dielectric layer and a second conductive shape on a second portion of the dielectric layer. A conductive trace is formed over at least a portion of the second conductive shape. The conductive trace electrically connects the first conductive shape with a substrate tie. An interconnect layer is coupled to the first conductive shape. The conductive trace is etched to electrically isolate the first conductive shape from the substrate tie.
Anmelder
- Firma
- NXP B.V.
- Land
- 🇳🇱 Niederlande
Niederländischer Halbleiterhersteller mit Sitz in Eindhoven. Entwickelt Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation, Sicherheit sowie industrielle Anwendungen.
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