Herstellungsverfahren einer Optoelektronischen Infrarot-Emittierenden Vorrichtung, die eine Aktive Schicht auf Germanium-Zinn-Basis Umfasst

Details

Veröffentlichungs-Nr.

EP3629385

Aktenzeichen

EP19199589

Anmeldetag

25. September 2019

Veröffentlichung

24. März 2021

Erteilung

24. März 2021

Rechtsraum

EP

IPC

H01L33/50H01L33/00H01S5/04H01S5/10// H01L33/08H01S5/026H01S5/343H01S5/183H01S5/187H01S5/30

Abstract

The invention relates to a method for manufacturing an optoelectronic device (1) for emitting infrared radiation (lambda2), comprising the following steps: i) producing a first stack (10) comprising: o an excitation light source (11), o a first bonding sub-layer (17) made of a metallic material chosen from gold, titanium and copper, ii) producing a second stack (20) comprising: o an active layer (23) based on GeSn re-emitting in the infrared (lambda2), obtained by epitaxy at an epitaxy temperature (T<epi>), o a second bonding sub-layer (25) made of said metallic material, iii) determining an assembly temperature (Tc) between an ambient temperature (T<amb>) and said epitaxy temperature, to within 10%, such that a surface energy of direct bonding of said metallic material is greater than or equal to 0.5 J/m<2>; iv) assembly by direct bonding, at said assembly temperature, of said stacks.

Anmelder

Firma

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Land

🇫🇷 Frankreich

Fachgebiete