Verfahren zur Herstellung eines Grabenoxids in einem Graben für eine Gate-Struktur in einem Halbleitersubstrat

Details

Veröffentlichungs-Nr.

EP3675179

Aktenzeichen

EP18001016

Anmeldetag

28. Dezember 2018

Veröffentlichung

13. November 2024

Erteilung

13. November 2024

Rechtsraum

EP

IPC

H01L29/423H01L21/265H01L21/28

Abstract

A method of manufacturing a trench oxide in a trench for a gate structure in a semiconductor substrate is described. The method comprises generating the trench (110) in the semiconductor substrate (101); generating an oxide layer (120) over opposing sidewalls (110A, 110B) of the trench; damaging at least a portion (121) of the oxide layer by ion implantation; coating the oxide layer with an etching mask (130); generating at least one opening (131) in the etching mask adjacent to one of the opposing sidewalls; and partly removing the oxide layer by etching the oxide layer beneath the etching mask down to an etching depth (ED) at the one of the opposing sidewalls (110A) by introducing an etching agent into the opening.

Anmelder

Firma

Infineon Technologies AG

Land

🇩🇪 Deutschland

Fachgebiete