Lambsdorff & Lange Patentanwälte Partnerschaft mbB

A powder-metallurgical steel consists of, in % in weight: C: 0.35% to 0.6%, N: 0.01% to 0.3%, Cr: 12% to 15%, Mo: 3% to 5.5%, Co: 1.6% to 5%, Nb: 1.2% to 1.75%, and optionally one or more of Si: less than 1.5%, Mn: less than 1.5%, W: less than 0.5%, Ni: less than 0.5%, Al: less than 0.3%, V: less than 1.0%, Ti: less than 1.0%, Ta: less than 0.5%, the balance being Fe and incidental impurities.

A semiconductor package includes a semiconductor chip having a first surface and a second surface opposite the first surface. The semiconductor chip is a lateral semiconductor device. A plurality of chip pads is arranged on the first surface of the semiconductor chip. The semiconductor chip is mounted on a carrier, wherein the semiconductor chip is bonded to the carrier with the first surface facing the carrier. A heatsink is disposed over the semiconductor chip. The heatsink is bonded to the semiconductor chip with the second surface of the semiconductor chip facing the heatsink. A conductor loop is bonded to the carrier, wherein a loop section of the conductor loop is connected to the heatsink. The conductor is a wire or a ribbon.

A driver chip configured to drive a gate of a power transistor comprises: a charger part configured to charge a gate of a power transistor, a logic part configured to control the charger part, a feedback loop configured to connect the gate of the power transistor to the logic part, wherein the logic part is configured to determine, using the feedback loop, a time interval it takes for charging a gate voltage up to a predetermined voltage, wherein the driver chip is configured to control a slew rate of a drain-source voltage of the power transistor using a closed-loop control scheme, and wherein the time interval is a feedback parameter of the closed-loop control scheme.

In einem Verfahren zur Herstellung eines Galvannealed-Stahlblechs wird ein Stahlblech bereitgestellt, welches Si-legiert ist. Das Stahlblech wird einem Rekristallisationsglühen unterzogen. Durch Verzinken des geglühten Stahlblechs wird eine zinkbasierte Schicht über dem Stahlblech hergestellt. Der Galvannealed-Prozess umfasst ferner das Wärmebehandeln des verzinkten Stahlblechs. Dabei wird vor der Wärmebehandlung eine Reaktivsubstanz R über dem Stahlblech angeordnet, die mit Si, das während der Wärmebehandlung aus dem Stahlblech ausdiffundiert, eine intermetallische R-Si Phase in der zinkbasierten Schicht bildet. Die R-Si Phase verringert den Anteil von sich bei der Wärmebehandlung in der zinkbasierten Schicht bildenden Fe-Si und/oder Fe-Si-Al Phase.

A cryostat socket for holding an ion trap device mounted on a substrate in a cryostat includes a housing frame provided for pre-assembly in the cryostat. A spring pin insert is arranged in the housing frame. The spring pin insert comprises a base plate and contact pins resiliently received in the base plate. The contact pins are arranged in an array. A housing cover has a receptacle for the substrate, wherein the housing cover, when assembled with the housing frame, exerts a compressive force on the front side of the substrate by which the rear side of the substrate is pressed onto the contact pins.

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