Halbleiterchip

Details

Veröffentlichungs-Nr.

EP3686929

Aktenzeichen

EP19153518

Anmeldetag

24. Januar 2019

Veröffentlichung

20. September 2023

Erteilung

20. September 2023

Rechtsraum

EP

IPC

H01L27/02H01L29/78H01L29/06H01L29/423

Abstract

In an embodiment, a semiconductor die comprises a transistor device that comprises a cell field and an edge termination region, a source pad arranged on the cell field, a gate pad laterally arranged laterally adjacent the cell field and in the edge termination region, a shielding region laterally surrounding the cell field, the shielding region comprising a non-depletable doped. The polysilicon ESD protection diode is arranged laterally between the gate pad and the source pad and vertically above at least a portion of the shielding region and comprises at least two separate sections that are electrically coupled in parallel between the gate pad and the source pad. The sections are laterally spaced apart by a gap situated at a corner of the gate pad.

Anmelder

Firma

Infineon Technologies Dresden GmbH & Co . KG

Land

🇩🇪 Deutschland

Fachgebiete