Verfahren zur Implantation von Spezies in ein Substrat in Verschiedene Tiefen
Anmelder: Infineon Technologies AG 🇩🇪
Details
- Veröffentlichungs-Nr.
- EP3742476
- Aktenzeichen
- EP19175280
- Anmeldetag
- 20. Mai 2019
- Veröffentlichung
- 6. November 2024
- Erteilung
- 6. November 2024
- Rechtsraum
- EP
- IPC
- H01L21/265
Abstract
A method of implanting an implant species into a substrate at different depths is described. The method includes forming an implant mask over the substrate. The implant mask includes a first implant zone designed as an opening and a second implant zone designed as a block array. The implant species is implanted through the implant mask under an implant angle tilted against a block plane. Thereby, a first implant area is formed by the implant species at a first depth in the substrate beneath the first implant zone, and a second implant area is formed by the implant species at a second depth in the substrate beneath the second implant zone. The first depth is greater than the second depth.
Anmelder
- Firma
- Infineon Technologies AG
- Land
- 🇩🇪 Deutschland
Deutscher Halbleiterkonzern mit Sitz in Neubiberg bei München, hervorgegangen aus Siemens. Entwickelt und fertigt Halbleiter und Systemlösungen für Automobil-, Industrie- und Sicherheitsanwendungen.
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