Halbleitervorrichtung und Verfahren
Anmelder: NXP B.V. 🇳🇱
Details
- Veröffentlichungs-Nr.
- EP3771028
- Aktenzeichen
- EP19188375
- Anmeldetag
- 25. Juli 2019
- Veröffentlichung
- 17. September 2025
- Erteilung
- 17. September 2025
- Rechtsraum
- EP
- IPC
- H01Q1/22H01Q1/32H01Q13/02H01Q13/10H01Q21/06H01Q13/06
Abstract
A semiconductor device and a method of making the same. The device includes an encapsulant. The device also includes a semiconductor die in the encapsulant. The device further includes electromagnetic radiation transmitting and receiving parts in the encapsulant. The device also includes an intermediate portion having a first surface and a second surface. The first surface is attached to the encapsulant. The device also includes an antenna portion attached to the second surface of the intermediate portion. The antenna portion includes one or more openings for conveying electromagnetic radiation. The intermediate portion includes one or more corresponding openings aligned with the openings of the antenna portion. Each opening of the antenna portion and each corresponding opening of the intermediate portion forms an electrically contiguous passage for conveying the electromagnetic radiation to the electromagnetic radiation transmitting and receiving parts in the encapsulant.
Anmelder
- Firma
- NXP B.V.
- Land
- 🇳🇱 Niederlande
Niederländischer Halbleiterhersteller mit Sitz in Eindhoven. Entwickelt Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation, Sicherheit sowie industrielle Anwendungen.
7.818 Patente in unserer Datenbank
Fachgebiete
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Bradler, Carola Romana
NXP Semiconductors Germany GmbH · Hamburg