Verfahren zur Herstellung von Optoelektronischer Vorrichtungen
Anmelder: Commissariat à l'Energie Atomique et aux Energies Alternatives 🇫🇷
Details
- Veröffentlichungs-Nr.
- EP3780123
- Aktenzeichen
- EP20190298
- Anmeldetag
- 10. August 2020
- Veröffentlichung
- 5. April 2023
- Erteilung
- 5. April 2023
- Rechtsraum
- EP
- IPC
- H01L33/00H01L25/075H01L25/16H01L33/40// H01L27/15H01L33/22H01L33/32H01L33/44
Abstract
The present application relates to a method for manufacturing optoelectronic devices, comprising the following successive steps: a) growing, on one face of a first substrate, a stack comprising at least one semiconductor layer (123, 125, 127); b) fixing a second substrate on a face of the stack opposite the first substrate, then removing the first substrate; c) fixing a third substrate (151) on a face of the stack opposite the second substrate, then removing the second substrate; d) cutting the assembly comprising the third substrate (151) and the stack into a plurality of first chips (160) each comprising a portion of the stack; and e) fixing each first chip (160), by its face opposite the third substrate (151), on a face of a fourth semiconductor substrate (170) in and on which a plurality of integrated control circuits (171) have been previously formed.
Anmelder
- Firma
- Commissariat à l'Energie Atomique et aux Energies Alternatives
- Land
- 🇫🇷 Frankreich
Französisches staatliches Forschungsinstitut mit Sitz in Paris (Verwaltung) und Standorten wie Grenoble und Saclay. Forscht in Kernenergie, erneuerbaren Energien, Mikroelektronik, Werkstoffwissenschaften, Verteidigungstechnik und Informationstechnologien.
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Cabinet Beaumont · Grenoble