Halbleitertransistorvorrichtung und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP3863062

Aktenzeichen

EP20156150

Anmeldetag

7. Februar 2020

Veröffentlichung

21. Mai 2025

Erteilung

21. Mai 2025

Rechtsraum

EP

IPC

H10D62/17H10D64/62H10D64/00H10D64/23H10D30/60H10D30/01

Abstract

The application relates to a semiconductor transistor device (1), having a source region (2), a body region (3) comprising a channel region (3.1) extending in a vertical direction (10), a drain region (4), a gate region (6) arranged aside the channel region (3.1) in a lateral direction (11), and a body contact region (7) made of an electrically conductive material (9), wherein the body contact region (7) forms a body contact area (8), the body contact region (7) being in an electrical contact with the body region (3) via the body contact area (8), and wherein the body contact area (8) is tilted with respect to the vertical direction (10) and the lateral direction (11).

Anmelder

Firma

Infineon Technologies Austria AG

Land

🇦🇹 Österreich

Fachgebiete