Halbleiterstruktur mit Risshemmender Dreidimensionaler Struktur

Details

Veröffentlichungs-Nr.

EP3866190

Aktenzeichen

EP20305144

Anmeldetag

17. Februar 2020

Veröffentlichung

18. Juni 2025

Erteilung

18. Juni 2025

Rechtsraum

EP

IPC

H01L23/00H01L23/58H10D1/68

Abstract

A semi-conductor structure with a crack-blocking three-dimensional structure is described. The semiconductor structure comprises a substrate (402); a functional circuit structure (404) disposed in an area of the substrate; and a three-dimensional structure (406) comprising at least one continuous trench (410) that extends perpendicularly towards a base surface of the substrate and that surrounds the area of the substrate containing the functional circuit structure.

Anmelder

Firma

Murata Manufacturing Co., Ltd.

Land

🇯🇵 Japan

Fachgebiete