Verfahren zur Herstellung einer Optoelektronischen Vorrichtung, die eine Vielzahl von Dioden Umfasst

Details

Veröffentlichungs-Nr.

EP3916788

Aktenzeichen

EP21174887

Anmeldetag

20. Mai 2021

Veröffentlichung

28. September 2022

Erteilung

28. September 2022

Rechtsraum

EP

IPC

H01L27/15H01L25/16H01L33/00// H01L33/38H01L33/62H01L27/146

Abstract

The present description relates to a method for manufacturing an optoelectronic device, comprising the following steps: a) forming an active diode stack (100) comprising first (103) and second (107) semiconductor layers (107) of opposite conductivity types; b) forming a control integrated circuit (200) comprising a plurality of elementary control cells (CTRL) each comprising at least one MOS transistor (M1); c) after steps a) and b), attaching the control integrated circuit (200) to the upper face of the active diode stack (100); and d) after step c), forming trenches (130) extending vertically through the control integrated circuit (200) and opening into or onto the first layer (103) and delimiting a plurality of pixels each comprising a diode and an elementary control cell (CTRL).

Anmelder

Firma

Commissariat à l'Energie Atomique et aux Energies Alternatives

Land

🇫🇷 Frankreich

Fachgebiete