Diode mit Lichtempfindlichem Intrinsischem Bereich

Details

Veröffentlichungs-Nr.

EP3961727

Aktenzeichen

EP20200240

Anmeldetag

6. Oktober 2020

Veröffentlichung

11. Mai 2022

Rechtsraum

EP

IPC

H01L31/105H01L31/0232H01L31/028H01L31/0224H01L31/0352H01L31/18G02F1/025

Abstract

The present invention relates to a diode (300) comprising a p-doped region (312), an n-doped region (314), and a light-sensitive intrinsic region (310) sandwiched laterally between the p-doped region (312) and the n-doped region (314) in a direction transverse to a direction of light propagation in the diode (300). The p-doped region (312) is made of a first material doped with a first type of dopant and the n-doped region (314) is made of a third material doped with a second type of dopant. The first material includes Si or SiGe. The third material includes Si or SiGe. The intrinsic region (310) is made of a second material different to at least one of the first material and the second material. The second material includes Ge, GeSn, or SiGe. The intrinsic region (310) has a maximal lateral extension between two lateral ends (318, 320) of the intrinsic region (310) of equal to or below 400 nm. The intrinsic region (310) is produced such that it (310) is not doped when the diode (300) is produced.

Anmelder

Firma

IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik

Land

🇩🇪 Deutschland

Fachgebiete