Herstellungsverfahren für ein Element einer Elektronischen Vorrichtung mit Verbesserter Zuverlässigkeit und Zugehöriges Element, Elektronische Vorrichtung und Elektronische Einrichtung

Details

Veröffentlichungs-Nr.

EP3965149

Aktenzeichen

EP21194172

Anmeldetag

31. August 2021

Veröffentlichung

25. September 2024

Erteilung

25. September 2024

Rechtsraum

EP

IPC

H01L23/31H01L29/16H01L29/872H01L29/06H01L29/66

Abstract

A manufacturing method of an anchorage element (82) of a passivation layer (69), comprising: forming, in a semiconductor body (80) made of SiC and at a distance from a top surface (52a) of the semiconductor body (80), a first implanted region (84) having, along a first axis (X), a first maximum dimension (di); forming, in the semiconductor body (80), a second implanted region (85), which is superimposed to the first implanted region (84) and has, along the first axis (X), a second maximum dimension (d<2>) smaller than the first maximum dimension (di); carrying out a process of thermal oxidation of the first implanted region (84) and second implanted region (85) to form an oxidized region (86'); removing said oxidized region (86') to form a cavity (83); and forming, on the top surface (52a), the passivation layer (69) protruding into the cavity (83) to form said anchorage element (82) fixing the passivation layer (69) to the semiconductor body (80).

Anmelder

Firma

STMicroelectronics S.r.l.

Land

🇮🇹 Italien

Fachgebiete