Halbleiter Vorrichtung mit Rückseitenschutzmechanismus

Details

Veröffentlichungs-Nr.

EP4086950

Aktenzeichen

EP21188545

Anmeldetag

29. Juli 2021

Veröffentlichung

9. November 2022

Rechtsraum

EP

IPC

G06F21/87H10F55/25H10H20/01H10H29/01H10H29/20H10H29/85// H10H20/82H10H20/85H10H20/857

Abstract

The invention relates to a semiconductor device (100) comprising:a substrate stack (122) comprising two permanently bonded semiconductor bodies (102, 104), which are stacked in a depth direction that points perpendicularly from a front side (108) towards a back side (110) of the substrate stack, and which share a buried bonding interface (106) that extends at a respective distance from the front and back sides and parallel thereto; wherein:- a first of the two bodies, hereinafter the protection body (104), comprises an active region (113) with one or more light emitters (112) at the buried bonding interface, and a light absorption region (114), which follows the active region in the depth direction and is opaque for light emitted from the one or more light emitters;- a second of the two bodies, hereinafter the circuit body (102), extends from the buried bonding interface to the front side of the substrate stack, is transmissive for the light emitted from the one or more light emitters, and comprises at least one light detector (118, 120) at the front side of the substrate stack, which is configured to provide a detector signal indicative of a detected light intensity of light emitted from the one or more light emitters and transmitted through the circuit body.The semiconductor device further comprises a driver unit that is configured to drive operation of the light emitters using predetermined operation parameters.

Anmelder

Firmen

IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik
Technische Universität Berlin

Land

🇩🇪 Deutschland

Fachgebiete