Brechungsindex-Sensorvorrichtung
Anmelder: IHP GmbH - Leibniz Institute for High Performance Microelectronics/ Leibniz-Institut für innovative Mikroelektronik, Brandenburgische Technische Universität Cottbus-Senftenberg, IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik 🇩🇪
Details
- Veröffentlichungs-Nr.
- EP4180796
- Aktenzeichen
- EP21207842
- Anmeldetag
- 11. November 2021
- Veröffentlichung
- 11. Juni 2025
- Erteilung
- 11. Juni 2025
- Rechtsraum
- EP
- IPC
- G01N21/41G01N21/552
Abstract
The invention relates to a refractive index sensor device (100) for detecting a presence of an analyte in a sample (130). The refractive index sensor device comprises a sensor layer (102). The sensor layer comprises a number of PIN-diode stripes (140, 142, 144, 146), each of the PIN-diode stripes being formed by a p-type semiconductor stripe (148), an intrinsic semiconductor material stripe (152) and an n-type semiconductor stripe (150), and an insulating material (154).The PIN-diode stripes run parallel to each other within the sensor layer along an in-plane direction that is vertical to a stacking direction (106) of layers of the refractive index sensor device, said PIN-diode stripes being electrically and spatially separated from each other by the insulating material.A nanohole array (104) is arranged on top of the sensor layer along the stacking direction. The nanohole array is formed by a plate-shaped element (116) having a number of feedthroughs (118, 120, 122, 124, 126) extending through said plate-shaped element and running parallel to the stacking direction. The feedthroughs are configured such that impinging light (128) can travel through the feedthroughs to be absorbed in the sensor layer.
Anmelder
- Firmen
- IHP GmbH - Leibniz Institute for High Performance Microelectronics/ Leibniz-Institut für innovative Mikroelektronik
Brandenburgische Technische Universität Cottbus-Senftenberg
IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik - Land
- 🇩🇪 Deutschland
Deutsches Forschungsinstitut (Leibniz-Institut) mit Sitz in Frankfurt (Oder), das an Hochleistungs-Mikroelektronik forscht, darunter Silizium-Germanium-Technologien und Halbleiterschaltungen für Kommunikations- und Sensoranwendungen.
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Eisenführ Speiser
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