Durchkontaktierung und Vergrabene oder Rückseitige Stromschiene mit Rückseitiger Verbindungsstruktur

Details

Veröffentlichungs-Nr.

EP4199054

Aktenzeichen

EP22213217

Anmeldetag

13. Dezember 2022

Veröffentlichung

5. Juli 2023

Rechtsraum

EP

IPC

H01L21/768H01L23/48H01L23/522H01L23/528H01L23/535

Abstract

An integrated circuit structure includes a device layer including a plurality of transistors, a first interconnect feature vertically extending through the device layer, and an interconnect structure below the device layer. The interconnect structure below the device layer includes at least a second interconnect feature. In an example, the second interconnect feature is conjoined with the first interconnect feature. For example, the first and second interconnect features collectively form a continuous and monolithic body of conductive material.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA

Fachgebiete