Elektroabsorptionsmodulierte Laservorrichtung zur Flip-Chip-Integration

Details

Veröffentlichungs-Nr.

EP4210184

Aktenzeichen

EP22305015

Anmeldetag

10. Januar 2022

Veröffentlichung

24. Juli 2024

Erteilung

24. Juli 2024

Rechtsraum

EP

IPC

H01S5/026H01S5/0234H01S5/042H01S5/12H01S5/22H01S5/227H01S5/00H01S5/028H01S5/125H01S5/02

Abstract

A device D composed of a laser working in a continuous wave condition (I) and an EAM (II) modulated in order to reach high frequencies without a limitation of optical power, wherein the manufacture of such a device is based on a one-step process of making a semi-insulating buried heterostructure (SIBH) where the p and n contacts 81, 82, 83) are at the same level on the same wafer face and can be easily soldered to the package of the flip-chip package FP.

Anmelder

Firma

Nokia Solutions and Networks Oy

Land

🇫🇮 Finnland

Fachgebiete