Verfahren zur Abscheidung von Piezoelektrischem Material aus Hochdotiertem Aluminiumnitrid

Details

Veröffentlichungs-Nr.

EP4224543

Aktenzeichen

EP22155617

Anmeldetag

8. Februar 2022

Veröffentlichung

9. April 2025

Erteilung

9. April 2025

Rechtsraum

EP

IPC

H10N30/076H10N30/853C23C14/06C23C14/02C23C14/28C23C14/34

Abstract

A method for manufacturing a doped wurtzite aluminium nitride piezoelectric thin film is disclosed which comprises: - providing a deposition device, such as a pulsed laser deposition device or a physical vapor deposition device, with a target (1) and a substrate (2), wherein the target material is a doped aluminum nitride composite and wherein the doping element is a rare earth element, preferably scandium; - depositing a first layer (5) of the target material on the substrate by operating the deposition device, wherein the kinetic energy of the plasma particles being deposited is above a first threshold value; and - depositing a second layer (6) of the target material on top of the first layer by operating the deposition device, wherein the kinetic energy of the plasma particles being deposited is below a second threshold value, wherein the first threshold value is larger than the second threshold value.

Anmelder

Firma

Lam Research Corporation

Land

🇺🇸 USA

Fachgebiete