Nichtflüchtige Speicheranordnung

Details

Veröffentlichungs-Nr.

EP4231802

Aktenzeichen

EP23155349

Anmeldetag

7. Februar 2023

Veröffentlichung

12. November 2025

Erteilung

12. November 2025

Rechtsraum

EP

IPC

H10B41/27H10B41/41H10B43/27H10B43/40

Abstract

A non-volatile memory device includes a first semiconductor layer including a first cell region in which a first memory cell array is disposed, a second cell region in which a second memory cell array is disposed, , wherein the first memory cell array and the second memory cell array each include a plurality of word lines, a plurality of memory cells, and a plurality of bit lines, and a second semiconductor layer including a page buffer circuit region in which a page buffer circuit connected to the first memory cell array and the second memory cell array is disposed, , wherein the page buffer circuit region overlaps a boundary region between the first cell region and the second cell region when viewed from the vertical direction.

Anmelder

Firmen

SAMSUNG ELECTRONICS CO., LTD.
Samsung Electronics Co., Ltd.

Land

🇰🇷 Südkorea

Fachgebiete