Kuhnen & Wacker Patent- und Rechtsanwaltsbüro PartG mbB

An electricity storage device disclosed herein includes an electrode assembly including a positive electrode and a negative electrode. The negative electrode includes a negative electrode composite material layer containing a graphite-based negative electrode active material particle. A mean circularity of the graphite-based negative electrode active material particle is equal to or more than 0.8. With respect to a particle size distribution on a volume basis of the graphite-based negative electrode active material particle that is obtained by a laser diffraction scattering method, all of following conditions are satisfied when a particle diameter whose cumulative frequency from a small particle side is 10% is treated as d10, a particle diameter whose cumulative frequency is 50% is treated as d50, and a particle diameter whose cumulative frequency is 90% is treated as d90: (1) d90/d10 is equal to or more than 5; and (2) d90/d50 is equal to or less than 2.

A main object of the present disclosure is to provide an anode layer of which volume change amount is suppressed. The present disclosure achieves the object by providing an anode layer including a composite active material, a carbon-based active material, and a binder, wherein the composite active material includes a Si-based active material, and a carbon-containing layer covering at least a part of a surface of the Si-based active material; the carbon-based active material includes a hydroxyl group on its surface; and the binder is a hydrophobic binder including an aromatic group ring.

A self-supporting electrode membrane may include: active material particles comprising an olivine-type cathode material having electron-conductive material coating; a conductive additive; a first polymer having a form covering the electron-conductive material coating; and a second polymer having a fibrillated form.

A main object of the present disclosure is to provide a cathode layer with which the decrease in capacity of a lithium ion battery due to charge and discharge can be suppressed. The present disclosure achieves the object by providing a cathode layer to be used in a lithium ion battery, the cathode layer including: a cathode active material, and an oxygen storing and releasing material, wherein the cathode active material includes a crystalline primary particle containing Li, TM, which is a transition metal, and O; the oxygen storing and releasing material is an oxide including at least one element of Ce and Zr; and a content of the oxygen storing and releasing material in the cathode layer is more than 0.5 weight% and less than 7 weight%.

A system and devices (100) are disclosed for implementing Compute with Memory Stack (CMS) semiconductor hardware (e.g., die, packages, etc.) with an architecture integrating memory and compute on a die, implementing shorter distance high-bandwidth communication between elements, and minimizing data traffic. A device (100) includes a first die (110), the first die (110) including a first compute component, a second compute component, a first set of Through Silicon Vias, TSVs, (152) associated with the first compute component and connecting stacked dies of the device (100), and a second set of TSVs (152) associated with the second compute component and connecting the stacked dies of the device (100). The device (100) includes a second die (115), stacked on the first die (110). The second die (115) may include a first memory bank module connected to the first compute component using the first set of TSVs (152), and a second memory bank module connected to the second compute component using the second set of TSVs (152).

A method of processing a frame in a wireless communication device is provided. The method includes: receiving (301), by the wireless communication device, the frame, the frame including a first user information field; detecting (302), by the wireless communication device and based on information contained in the first user information field, whether the frame includes an intermediate frame check sequence, IFCS, and whether location information for the IFCS is available; when the location information for the IFCS is available, determining (304), by the wireless communication device and based on the location information contained in a user information field following a common information field of the frame, a position of one or more additional user information fields that include the IFCS; and when the location information for the IFCS is available, verifying (306), by the wireless communication device, the IFCS based on the one or more additional user information fields.

A method includes providing a roll holder including a memory, the roll holder configured to allow a roll around which a sheet is wound to be attached, attaching the roll to the provided roll holder and writing, by a writing device, information related to the roll into the memory.

A photoelectric conversion element and a method for manufacturing the photoelectric conversion element capable of suppressing an increase in internal resistance are provided. A photoelectric conversion element (1) according to the present disclosure includes a first transparent electrode layer (12) that is disposed on a substrate, a photoelectric conversion layer (13) positioned on the first transparent electrode layer (12), a second transparent electrode layer (14) positioned on the photoelectric conversion layer (13), and a conductor part (15). Detailed configurations of the first transparent electrode layer (12), the photoelectric conversion layer (13), the second transparent electrode layer (14), and the conductor part (15) are described in the specification.

Disclosed herein is a positive electrode active material including a secondary particle (2). The secondary particle (2) includes a first particle group and a second particle group. Each of the first particle group and the second particle group is composed of primary particles. The primary particles contain an olivine-type phosphate compound. An average particle diameter of the second particle group is larger than an average particle diameter of the first particle group. In the secondary particle (2), the primary particles (1a) belonging to the first particle group and the primary particle (1b) belonging to the second particle group are dispersed in each other.

A semiconductor device includes a gate stacking structure (120), a channel structure (CH), a cover insulation layer (168a), and a common source layer (170). The gate stacking structure (120) has a first surface (120a) and a second surface opposite to each other, and includes a plurality of interlayer insulation layers (132m) and a plurality of gate electrodes (130) alternately stacked on each other. The channel structure (CH) includes a channel penetration portion (CHa) and a channel expanded portion (CHb). The channel structure (CH) includes a channel layer (140) and a gate dielectric layer (150). The gate dielectric layer (150) includes a first dielectric portion (150a) in the channel penetration portion (CHa) and a second dielectric portion (150b) extending from the first dielectric portion (150a) in a horizontal direction at a portion adjacent to the first surface (120a) of the gate stacking structure (120).