Stromnebenschluss mit Verringerter Temperatur in Bezug auf Spannungsabfall

Details

Veröffentlichungs-Nr.

EP4257986

Aktenzeichen

EP23164565

Anmeldetag

28. März 2023

Veröffentlichung

3. Dezember 2025

Erteilung

3. Dezember 2025

Rechtsraum

EP

IPC

G01R1/20H01C1/014

Abstract

An electronic device includes a structured metallization layer including a plurality of contact pads that are electrically isolated from one another, and a metal clip connected in a current shunt measurement arrangement with a semiconductor device, wherein the metal clip includes first, second and third landing pads, a first bridge span connected between the first and second landing pads, and second bridge span connected between the second and third landing pads, wherein the first, second third landing pads are respectively thermally conductively attached to first, second and third contact pads from the structured metallization layer, and wherein the second mounting pad is electrically floating.

Anmelder

Firma

Infineon Technologies AG

Land

🇩🇪 Deutschland

Fachgebiete