Laufzeitsensor

Details

Veröffentlichungs-Nr.

EP4279958

Aktenzeichen

EP22305725

Anmeldetag

17. Mai 2022

Veröffentlichung

22. November 2023

Rechtsraum

EP

IPC

G01S17/89G01S17/894G01S7/486G01S7/481G01S7/484G01S7/4863G01S7/4865H04M1/26H10F55/25H10F77/14H04M1/00

Abstract

The present disclosure relates to a time-of-flight sensor, ToF (100) comprising, on a same base substrate (122), a light emitter (108) emitting light (118) into an image scene (50), a reference sensor (106) detecting light emitted by the light emitter (108), and a signal reception sensor (104) array separated from the light emitter (108) by an optical barrier (126), the optical barrier (126) preventing light emitted by the light emitter (108) from directly reaching the signal reception sensor (104) array, the signal reception sensor (104) array detecting light (124) reflected by the image scene (50), wherein the reference sensor (106) and the signal reception sensor (104) array are based on semiconductor nanoparticles. The optical barrier (126) is arranged between the upper surface (114) of the base substrate (122) and an inner surface of a packaging unit (102). The base substrate (122) may also comprise a control circuit (112). Alternatively, a device substrate comprises the control circuit (112). The semiconductor nanoparticles can be quantum dots, quantum wires, quantum rods, or quantum wells. The light emitter (108), which may be a vertical-cavity surface-emitting layer, VCSEL, may also be based on semiconductor nanoparticles. The semiconductor nanoparticle layer or layers of the reference sensor (106), of the signal reception sensor (104), and of the emitter (108) are for example formed of InAs or InSb or InAs_xP_x or InAs_xSb_x. The device (100) is for example implemented under a touch display screen of a mobile communication device.

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Firmen

STMicroelectronics (Research & Development) Limited
STMICROELECTRONICS (GRENOBLE 2) SAS

Land

🇬🇧 Großbritannien

Fachgebiete