Mikroelektronische Anordnung mit Zwei Feldeffekttransistoren mit einer Gemeinsamen Elektrode

Details

Veröffentlichungs-Nr.

EP4297091

Aktenzeichen

EP23180760

Anmeldetag

21. Juni 2023

Veröffentlichung

25. Februar 2026

Erteilung

25. Februar 2026

Rechtsraum

EP

IPC

H10D30/67H10D86/00

Abstract

The invention relates to a microelectronic device (1) comprising a first transistor (100) comprising a first drain and a first source, a first doped area (110) constituting one of the first drain and the first source, a second doped area (120) constituting the other of the first drain and the first source, a second transistor (200) comprising a second drain and a second source, a third doped area (210) constituting the second source or the second drain, a fourth doped area (220), constituting the other of the second drain and the second source, a dielectric layer (300) having an upper face (301) in contact with the four doped areas and a rear gate (400) in contact with a lower face (302) of the dielectric layer. The second doped area and the fourth doped area form a common electrode (1000).

Anmelder

Firmen

Commissariat à l'Energie Atomique et aux Energies Alternatives
Commissariat à l'énergie atomique et aux énergies alternatives

Land

🇫🇷 Frankreich

Fachgebiete