Leistungsrahmengehäuse mit Reduzierten Löthohlräumen

EP4345891 Art B1 3. September 2025

Anmelder: STMicroelectronics, Inc. 🇵🇭

Details

Veröffentlichungs-Nr.
EP4345891
Aktenzeichen
EP23198385
Anmeldetag
19. September 2023
Veröffentlichung
3. September 2025
Erteilung
3. September 2025
Rechtsraum
EP
IPC
H01L23/495H01L23/31
Offizieller Volltext

Abstract

An electronic device includes an integrated circuit (IC) with its second face bonded to a first surface of a first support. A conductive clip has a first portion that is elongate and extends across the IC, having its second surface bonded to a first face of the IC by a solder layer. A second portion of the clip extends from the first portion away from the IC toward a second support with the second surface bonded to a first surface of the second support. A first surface of the clip has a pattern formed therein including a depressed floor with fins extending upwardly therefrom. Through-holes extend through the depressed floor to the second surface of the clip. An encapsulating layer covers portions of the first and second supports, IC, and clip while leaving the first surface of the first portion exposed to permit heat to radiate away therefrom.

Anmelder

Firma
STMicroelectronics, Inc.
Land
🇵🇭 PH
🇨🇭 STMicroelectronics International

Schweizer Gesellschaft des Halbleiterkonzerns STMicroelectronics, die Chips und Sensoren für Automobiltechnik, Industrie und Unterhaltungselektronik entwickelt.

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