Quellenmaskenoptimierung auf der Basis Systematischer Effekte auf einen Lithographischen Apparat

Details

Veröffentlichungs-Nr.

EP4394512

Aktenzeichen

EP22216705

Anmeldetag

27. Dezember 2022

Veröffentlichung

3. Juli 2024

Rechtsraum

EP

IPC

G03F7/20

Abstract

Source mask optimization (SMO) is described. The SMO comprises determining a source configuration (e.g., an illumination pupil) of the lithographic apparatus for first features in a first layer of a pattern based on systematic effects on the lithographic apparatus components that cause feature dependent imaging performance changes for second features in a second layer of the pattern. The systematic effects on the lithographic apparatus components comprise mirror heating, for example. Mirror heating based SMO is performed for a first layer's illumination pupil with a cost function for second layer's performance. For example, mirror heating based SMO may be performed to generate a metal layer illumination pupil that creates less mirror heating impact to a subsequent via layer exposure, and/or mirror heating based SMO may be performed to generate a via layer illumination pupil that is less sensitive to mirror heating caused by a prior metal layer exposure, as representative examples.

Anmelder

Firma

ASML Netherlands B.V.

Land

🇳🇱 Niederlande

Fachgebiete