ASML Netherlands B.V

The present disclosure describes an optical assembly for a charged particle-optical device configured to project one or more charged particle beams towards a sample, wherein the optical assembly comprises: a charged particle-optical element configured for passage of the one or more charged particle beams; detector element for detecting charged particles emitted from the sample in relation to the one or more charged particle beams; an optical element configured to project optical radiation towards the sample, wherein the optical element is configured to be positioned between the charged particle-optical element and the detector element and is further configured to be directly attached by adhesive to the charged particle-optical element or the detector element.

The present disclosure relates to a method of bonding a first semiconductor substrate and a second semiconductor substrate. The method may comprise clamping the first semiconductor substrate to a clamp such that the first semiconductor substrate is supported by a plurality of support protrusions on the clamp. The method may further comprise, applying a force to the first semiconductor substrate to initiate the bonding of the first semiconductor substrate and the second semiconductor substrate. The force may be generated by, or transmitted by, the plurality of support protrusions on the clamp. The applying of the force to the first semiconductor substrate to initiate the bonding of the first semiconductor substrate and the second semiconductor substrate may simultaneously initiate a plurality of bond fronts.

Methods, targets, and apparatus for measuring an etch depth of a structure on a substrate. A substrate is provided, comprising the structure and a etch-sensitive target configured to have an asymmetric response to a etch. An etch of the substrate is performed, thereby affecting an asymmetry in the etch-sensitive target. The etch-sensitive target is measured, using radiation, to quantify the asymmetry, and the quantified asymmetry is mapped to the etch depth based on predetermined etch reference values.

There is provided a method of determining a correction for at least one first substrate and/or a second substrate, the correction being defined across an exposure field on at least one first substrate, wherein the exposure field comprises multiple sub-field portions, wherein each sub-field portion is to be bonded to a second substrate to obtain a bonded substrate in a bonding process, the method comprising: obtaining a first component of parameter of interest data relating to a parameter of interest which is common to each sub-field portion of the said multiple sub-field portions; and determining the correction based on suppression of the first component for each sub-field portion of the multiple sub-field portions.

There is provided a microelectromechanical system (MEMS) comprising two surfaces, wherein at least a portion of one of the surfaces has a coating comprising an etch resistant layer. Also described is an optical element for semiconductor manufacturing processes comprising such a system, as well as an exposure apparatus for semiconductor manufacturing processes comprising such a system or optical element. Further describes is a the use of such system, optical element or exposure apparatus, as well as a method of coating a silicon-based surface of a MEMS device with a metal silicate layer, and a method of manufacturing a MEMS device.

Metrology assemblies for measuring a parameter of a substrate, the metrology assembly comprising a photonic crystal surface emitting laser PCSEL configured to output radiation and a photonic integrated circuit PIC. The PCSEL is directly attached to a back surface of the PIC. The metrology assembly is configured to direct the radiation from the PCSEL to the substrate. The PIC has at least one input coupler configured to capture at least some of the radiation after it has interacted with the substrate. A detector configured to receive at least some of the captured radiation from the PIC for measuring the parameter.

An apparatus for a laser-produced plasma radiation source comprises a generally tubular body. A radially inner surface of the generally tubular body is provided with a structure configured such that radiation received by said radially inner surface from a second axial end is at least partially directed back through the second axial end of the generally tubular body. The generally tubular body may comprise inner and outer tubular portions that define a fluid passageway which may be arranged such that an outlet of the fluid passageway directs fluid received at an inlet generally radially outwards from an axis of the generally tubular body. The apparatus may further comprise a collector provided with a concave reflective surface with a central aperture; and the generally tubular body may be disposed in the central aperture of the collector.

A die carrier for a bonding tool is configured to support a plurality of dies on respective die regions of a support surface of the die carrier. The die regions comprise openings such that supported surfaces of dies supported on the die regions are fluidly communicable with an external environment of the volume defined by the supported surfaces of the dies and the support surface of the die carrier.

Disclosed is a metrology method, comprising: obtaining metrology image data of a structure on a substrate, the metrology image data comprising images acquired at a substrate orientation using a metrology apparatus; obtaining image metadata corresponding to the metrology image data; obtaining a trained parameter of interest inference model, the trained parameter of interest inference model being operable to infer corrected parameter of interest data from images acquired at the substrate orientation and their corresponding image metadata, the corrected parameter of interest data being corrected for metrology apparatus asymmetry error; and using the trained parameter of interest inference model to infer the corrected parameter of interest data from the metrology image data and the corresponding image metadata.

The present invention provides a method for determining a set of correction weights to correct data relating to height measurements of a substrate comprising a plurality of fields to be exposed, the method comprising: obtaining height data relating to a plurality of illumination settings of measurement radiation used to perform a measurement, where each illumination setting comprises a different wavelength, polarization, angle of incidence, or any combination thereof; and determining at least one of: a) one or more correction weights to minimize variation of intrafield height data, and/or b) one or more correction weights such that the height data across the plurality of fields is largely equivalent.