Graben-Leistungs-Mosfet mit Geteiltem Gate und Dicker Poly-Zu-Poly-Isolierung

Details

Veröffentlichungs-Nr.

EP4425567

Aktenzeichen

EP24158005

Anmeldetag

16. Februar 2024

Veröffentlichung

4. September 2024

Rechtsraum

EP

IPC

H01L29/40H01L29/66H01L29/78// H01L29/739

Abstract

A semiconductor substrate has a substrate trench extending from a front surface and including a lower part and an upper part. A first insulation layer lines the substrate trench, and a first conductive material is insulated from the semiconductor substrate by the first insulating layer to form a transistor field plate electrode. A gate trench in the first insulation layer defines an integral part of the first insulating layer surrounding the first conductive material in an upper part of the substrate trench. A second insulating layer lines the semiconductor substrate at the upper part of the substrate trench in the gate trench. A second conductive material fills the gate. The second conductive material forms a transistor gate electrode that is insulated from the semiconductor substrate by the second insulating layer and further insulated from the first conductive material by the integral part of the first insulating layer.

Anmelder

Firma

STMicroelectronics International N.V.

Land

🇨🇭 Schweiz

Fachgebiete