Galvanisch Isolierte Steuerung
Anmelder: NXP USA, Inc. 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP4456398
- Aktenzeichen
- EP23169612
- Anmeldetag
- 24. April 2023
- Veröffentlichung
- 30. Oktober 2024
- Rechtsraum
- EP
- IPC
- H02M1/14H02M1/32H02M1/08H01L23/495// H01L25/16H01L25/065
Abstract
A gate driver comprising a first die including a first circuitry configured to operate in a first voltage domain and a second die comprising second circuity, stacked with the first die. The first dies galvanically isolated from the second die by a galvanic isolation layer. The first circuitry of the first die and the second circuitry of the second die are configured to provide an communication channel through the galvanic isolation layer. The gate driver comprising monitoring circuitry configured to receive signalling from the communication channel and determine deterioration of the galvanic isolation layer based on one or more of an amplitude, a power, a received signal strength indicator value, a phase shift and a frequency of the received signalling relative to a respective threshold.
Anmelder
- Firma
- NXP USA, Inc.
- Land
- 🇺🇸 USA
US-amerikanische Gesellschaft des Halbleiterkonzerns NXP, die Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation und Industrieelektronik entwickelt.
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