Temperaturkompensiertes Überstromerkennungssystem

Details

Veröffentlichungs-Nr.

EP4468606

Aktenzeichen

EP23305830

Anmeldetag

25. Mai 2023

Veröffentlichung

27. November 2024

Rechtsraum

EP

IPC

H03K17/082H03K17/18

Abstract

Overcurrent detection circuit for a semiconductor switch (10) such as an IGBT or a MOSFET said detection circuit comprising a compensation circuit configured to at least partly compensate a temperature dependency of a built-in current mirror (12) output of said power semiconductor switch (10), said current mirror output (12) being connected to a measurement resistor Rs (20, 20'), connected between said current mirror output and a low voltage level of a driver voltage source (40), and connected to a first adder input having a second adder input receiving an offset V_ofst (32) to provide a mirror voltage Vs mirroring the current Ic flowing through the power switch emitter-collector or drain-source junction. The compensation circuit comprises a current source (31) configured to provide a reference current i_R and connected to a temperature sensitive element (13, 14) of said power semiconductor switch in which said reference current i_R flows during at least a dedicated period of measurement through said temperature sensitive element (13, 14) to provide a reference voltage Ve, a comparator (34, 34'), comparing said reference voltage Ve or an amplified reference voltage βVd and said mirror voltage and said compensation circuit is configured to provide at an output of said comparator a detection signal Ocd changing its state when said mirror voltage exceeds said reference voltage Ve or said amplified reference voltage βVd.

Anmelder

Firmen

Mitsubishi Electric R&D Centre Europe B.V.
MITSUBISHI ELECTRIC CORPORATION

Land

🇳🇱 Niederlande

Fachgebiete