Gate-All-Around-Feldeffekttransistor mit Seitlich Diffundiertem Metalloxidhalbleiter

Details

Veröffentlichungs-Nr.

EP4498435

Aktenzeichen

EP24190973

Anmeldetag

25. Juli 2024

Veröffentlichung

11. Juni 2025

Rechtsraum

EP

IPC

H10D62/10H10D64/00H10D30/43H10D30/65H10D84/01H10D84/83H10D30/67H10D62/13// H10D62/17

Abstract

A gate all-around laterally diffused metal-oxide semiconductor device is provided. An apparatus (100, 200, 300, 400) includes a substrate (120, 280, 320, 480), two or more first sheets (125a-125d, 255, 325a-325d, 455) disposed on the substrate (120, 280, 320, 480), a gate (110, 240, 310, 440) disposed on the substrate and at least part of the two or more first sheets (125a-125d, 255, 325a-325d, 455), and a first epitaxial layer disposed on the substrate (120, 280, 320, 480) on a first side of the gate (110, 240, 310, 440) and at least part of the two or more first sheets (125a-125d, 255, 325a-325d, 455). At least part of the two or first more sheets extends longitudinally from the gate (110, 240, 310, 440) to the first epitaxial layer.

Anmelder

Firma

Avago Technologies International Sales Pte. Limited

Land

🇸🇬 Singapur

Fachgebiete