Halbleiterbauelement mit Umgebender Bump-Metallisierung und Verfahren dafür

Details

Veröffentlichungs-Nr.

EP4542644

Aktenzeichen

EP24204783

Anmeldetag

4. Oktober 2024

Veröffentlichung

23. April 2025

Rechtsraum

EP

IPC

H01L23/485H01L21/60

Abstract

A method of manufacturing a semiconductor device is provided. The method includes forming a first non-conductive layer over a top side a semiconductor die and patterning the first non-conductive layer to form an opening exposing a top surface of a bond of the semiconductor die. A metal trace of a redistribution layer is formed over a portion of the first non-conductive layer and exposed top surface of the bond pad. A surrounding bump metallization (SBM) structure is formed on a portion of the metal trace. The SBM structure includes a plurality of vertical metal wall segments surrounding a central opening.

Anmelder

Firma

NXP USA, Inc.

Land

🇺🇸 USA

Fachgebiete