Verfahren zur Rückseitendünnung einer Integrierten Schaltung

Details

Veröffentlichungs-Nr.

EP4546397

Aktenzeichen

EP23206357

Anmeldetag

27. Oktober 2023

Veröffentlichung

30. April 2025

Rechtsraum

EP

IPC

H01L21/306

Abstract

The present invention relates to a method for backside thinning of an integrated circuit, herein referred to as IC. The method comprises the steps of:- providing the IC, wherein the IC comprises a Si-containing substrate forming the backside of the IC, a Si-based insulator-containing shallow trench isolation, herein referred to as STI, arranged on the Si-containing substrate and one or more functional IC components arranged within the STI and/or on the STI opposite the Si-containing substrate,- providing a polishing pad,- applying a slurry onto the polishing pad and/or the backside of the IC, the slurry being configured to provide an at least Si-selective removal upon exertion of a mechanical shear force,- bringing the backside of the IC and the polishing pad into contact with each other, and- thinning the IC to a thickness of the Si-containing substrate of 1 µm or less by exerting a mechanical shear force to the IC's backside while maintaining the contact between the IC and the polishing pad up.

Anmelder

Firma

IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik

Land

🇩🇪 Deutschland

Fachgebiete