Vergossenes Leistungsgehäuse mit Vertikaler Verbindung

EP4546399 Art A1 30. April 2025

Anmelder: Infineon Technologies Austria AG 🇦🇹

Details

Veröffentlichungs-Nr.
EP4546399
Aktenzeichen
EP23206097
Anmeldetag
26. Oktober 2023
Veröffentlichung
30. April 2025
Rechtsraum
EP
IPC
H01L21/48H01L23/31H01L23/495
Offizieller Volltext

Abstract

A molded power package includes a laser-activatable mold compound having a plurality of laser-activated regions which are plated with an electrically conductive material to form metal pads and/or metal traces at a first side of the laser-activatable mold compound. The package further includes a semiconductor power die embedded in the laser-activatable mold compound and having a plurality of bond pads and a bond pad interconnect electrically connecting the plurality of bond pads of the semiconductor power die to the metal pads and/or metal traces at the first side of the laser-activatable mold compound. A leadframe includes a carrier section on which the semiconductor power die is mounted and a carrier interconnect section integral with the carrier section. The carrier interconnect section electrically connects the carrier section to the metal pads and/or metal traces at the first side of the laser-activatable mold compound. An upper surface of the carrier interconnect section is at a height that is elevated relative to an upper surface of the carrier section.

Anmelder

Firma
Infineon Technologies Austria AG
Land
🇦🇹 Österreich
🇦🇹 Infineon Technologies Austria

Österreichische Konzerngesellschaft des deutschen Halbleiterherstellers Infineon mit Sitz in Villach. Entwickelt und fertigt Halbleiterbauelemente für Automobil-, Energie- und Industrieanwendungen.

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