Vergossenes Leistungsgehäuse mit Vertikaler Verbindung
Anmelder: Infineon Technologies Austria AG 🇦🇹
Details
- Veröffentlichungs-Nr.
- EP4546399
- Aktenzeichen
- EP23206097
- Anmeldetag
- 26. Oktober 2023
- Veröffentlichung
- 30. April 2025
- Rechtsraum
- EP
- IPC
- H01L21/48H01L23/31H01L23/495
Abstract
A molded power package includes a laser-activatable mold compound having a plurality of laser-activated regions which are plated with an electrically conductive material to form metal pads and/or metal traces at a first side of the laser-activatable mold compound. The package further includes a semiconductor power die embedded in the laser-activatable mold compound and having a plurality of bond pads and a bond pad interconnect electrically connecting the plurality of bond pads of the semiconductor power die to the metal pads and/or metal traces at the first side of the laser-activatable mold compound. A leadframe includes a carrier section on which the semiconductor power die is mounted and a carrier interconnect section integral with the carrier section. The carrier interconnect section electrically connects the carrier section to the metal pads and/or metal traces at the first side of the laser-activatable mold compound. An upper surface of the carrier interconnect section is at a height that is elevated relative to an upper surface of the carrier section.
Anmelder
- Firma
- Infineon Technologies Austria AG
- Land
- 🇦🇹 Österreich
Österreichische Konzerngesellschaft des deutschen Halbleiterherstellers Infineon mit Sitz in Villach. Entwickelt und fertigt Halbleiterbauelemente für Automobil-, Energie- und Industrieanwendungen.
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