Josephson-Übergangseinrichtung und Verfahren zur Herstellung der Einrichtung

Details

Veröffentlichungs-Nr.

EP4565051

Aktenzeichen

EP23213425

Anmeldetag

30. November 2023

Veröffentlichung

4. Juni 2025

Rechtsraum

EP

IPC

H10N60/01H10N60/12

Abstract

A Josephson junction stack is produced including a first superconducting electrode layer (3), a barrier layer (4',5) directly on the first superconducting electrode layer and a second superconducting electrode layer (6) directly on the barrier layer. The superconducting electrode layers (3,6) are formed of a superconducting nitride material, and the barrier layer consists of a stack of an amorphous Si layer (4') and directly on said amorphous Si layer: a passivation layer (5) formed of a mixture of Si with a second element configured to prevent the formation of silicon nitride during or after the deposition of the second superconducting electrode layer. The Josephson junction device is produced by patterning the stack.

Anmelder

Firma

IMEC VZW

Land

🇧🇪 Belgien

Fachgebiete