Ic-Esd-Schutz mit Verteiltem Siliziumgesteuerten Gleichrichter

Details

Veröffentlichungs-Nr.

EP4567890

Aktenzeichen

EP23214896

Anmeldetag

7. Dezember 2023

Veröffentlichung

11. Juni 2025

Rechtsraum

EP

IPC

H01L27/02

Abstract

Disclosed is a method and IC, comprising: a p-type substrate layer (410), an ESD protection device (420), and a further region (430); wherein the ESD protection device comprises: a n-well region (422) having therein a n+ contact region (424) and a p+ anode contact region (426), and a trigger device (428) connected between the n+ contact region and a further p+ contact region (446) outside of the n-well, wherein the trigger device is operable, in response to an ESD event trigger, to provide a low-resistance path between the anode contact region and the further p+ contact region; wherein the further region comprises a further n-well (432), spaced apart from the ESD protection device lower-doped n-well region (422); and wherein the further n-well is operable as a cathode of an SCR comprising the anode, and the ESD protection device n-well and the p-doped substrate layer as a n- and p-intermediate nodes.

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande

Fachgebiete