Semi-Isolierender Bündelquerschnitt Umwandler mit Grosser Brechzahl zur Optischen Kopplung von Iii-V an Silizium-Heterointegrierte Schaltungen

Details

Veröffentlichungs-Nr.

EP4572039

Aktenzeichen

EP23307208

Anmeldetag

14. Dezember 2023

Veröffentlichung

18. Juni 2025

Rechtsraum

EP

IPC

H01S5/02H01S5/026H01S5/10H01S5/227// H01S5/22H01S5/323

Abstract

A photonic device (10) with a longitudinal direction (D) of light propagation comprising:- a substrate (12),- a PIN junction (14) comprising an active core (16), an inferior cladding (18) and a superior cladding (20),wherein the active core (16) is placed in between the inferior cladding (18) and the superior cladding (20) among which one is made of N doped and the other of P doped materials, the active core (16) being tapered along the longitudinal direction (D) in a transition portion (38),- a regrown layer (26) made of a semi-insulating material and regrown on top of at least part of the inferior cladding (18) and extending vertically on lateral sides of the active core (16) and of the superior cladding (20),wherein the regrown layer (26) is narrower in the transition portion (38) than in the main portion (34).

Anmelder

Firma

Nokia Solutions and Networks Oy

Land

🇫🇮 Finnland

Fachgebiete