Verfahren und System zur Bestimmung Optischer Aberrationen und Lithographische Vorrichtung mit dem System

Details

Veröffentlichungs-Nr.

EP4579340

Aktenzeichen

EP25170109

Anmeldetag

11. April 2025

Veröffentlichung

21. Januar 2026

Rechtsraum

EP

IPC

G03F7/00

Abstract

The disclosure provides a method for determining aberrations of projection optics of a lithographic apparatus using multiple first gratings arranged on a reticle (MA) and corresponding multiple second gratings arranged at or near a substrate table (WT), the method comprising the steps of: projecting a beam (B) of radiation from a source (SO) towards the substrate table through an illumination slit (CS) and via projection optics of a projection system (PS); moving the first gratings (15) at a first speed relative to the illumination slit (CS); receiving light reflected from the first gratings by the second gratings (19) while moving the second gratings relative to the first gratings at a second speed, capturing radiation received through the second gratings to provide images, determining phase curves for each pixel of the respective images, and using the phase curves for determining aberrations of the projection optics.

Anmelder

Firma

ASML Netherlands B.V.

Land

🇳🇱 Niederlande

Fachgebiete