Elektromagnetische Abschirmung für Leitungsloses Halbleitergehäuse

EP4579735 Art A1 2. Juli 2025

Anmelder: NXP USA, Inc. 🇺🇸

Details

Veröffentlichungs-Nr.
EP4579735
Aktenzeichen
EP24220855
Anmeldetag
18. Dezember 2024
Veröffentlichung
2. Juli 2025
Rechtsraum
EP
IPC
H01L23/495H01L23/552H01L21/48
Offizieller Volltext

Abstract

Structures and methods for electromagnetic shielding of leadless semiconductor packages provide complete module-level electromagnetic shielding by combining plated shielding with proposed modified ground lead arrangement and ground pad grounding. A package including a leadframe, ground leads, and signal leads is stamped to form a "bump" in the ground leads around the perimeter of the package. After overmolding, the package is cut to expose the bumps; then, a full shielding enclosure is formed over the top of the package into contact with the exposed ground leads. Components of the leadframe that extend to the perimeter of the device, such as corner bars connecting to the center flag, can also be stamped and brought into contact with the shield. The ground leads may further be connected to a center flag of the leadframe for full-enclosure shielding. The signal leads remain electrically isolated from the leadframe and the shielding enclosure.

Anmelder

Firma
NXP USA, Inc.
Land
🇺🇸 USA
🇺🇸 NXP USA

US-amerikanische Gesellschaft des Halbleiterkonzerns NXP, die Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation und Industrieelektronik entwickelt.

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