Colaiuda, Antonella
Inhouse NXP Semiconductors Germany GmbH
Kontaktdaten
22529 Hamburg
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Patente
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19.08.2026 · NXP B.V.
Analog-Digital-Wandler
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Zusammenfassung
Herein is disclosed a voltage input terminal configured to receive an input voltage; flash analogue to digital converter, ADC; an ADC, wherein the ADC comprises: a plurality of capacitors configured and arranged such that they at least partially define the bit resolution of the ADC; a controller; wherein: the flash ADC is configured to receive the input voltage and provide a flash ADC signal, wherein the flash ADC signal is a digital representation of the input voltage; the controller is configured to provide for pre-charging of the plurality of capacitors based on the flash ADC signal; and after the plurality of capacitors is pre-charged, the controller is configured to provide for sampling of the input voltage onto the plurality of capacitors, and the provision of an ADC output signal comprising a digital representation of the input voltage by the ADC. |
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19.08.2026 · NXP B.V.
Spannungsunempfindliche Zener-Diode
Halbleiter & Elektrische Bauelemente
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Zusammenfassung
The disclosure relates to a Zener diode that is insensitive to external stress, and to a method of making such a Zener diode. A lattice mismatch is used to induce a compressive stress in the junction of the Zener diode in the direction of current flow. The lattice mismatch may be produced by carbon doping. |
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12.08.2026 · NXP B.V.
Verfahren und System zur Erzeugung einer Digitalen Signatur
Nachrichtentechnik & Telekommunikation
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Zusammenfassung
The present disclosure relates to system and method for generating a digital signature. comprising computing via a hash function a public key; computing a signature comprising an authentication path traversing the node of at least one binary subtree belonging to a hypertree comprising d layers of binary subtrees each comprising a root node and leaf-nodes; storing the leaf-nodes at the top layer d-1, and those of at least one of the binary subtrees at an intermediate layer d-x, where 2≤x<d; extracting a binary subtree index idx<sub>tree</sub> and inferring if the extracted binary subtree index idx<sub>tree</sub> is associated with at least one binary subtree linked to the stored leaf-nodes at the intermediate layers; choosing an operation mode; generating the digital signature based on the chosen operation mode and on the association of the extracted binary subtree index idx<sub>tree</sub> with a binary subtree linked to the stored leaf-nodes at the intermediate layers. |
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29.07.2026 · NXP USA, Inc.
Übertragung von Hochfrequenzsignalen durch einen Interposer
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Zusammenfassung
An integrated circuit assembly includes first and second circuit portions, an interposer vertically disposed between the first and second circuit portions, the interposer having a plated through hole with a metallic sidewall, and a metallic pillar that extends through the plated through hole without touching the metallic sidewall. The metallic pillar and the plated through hole together form a vertical coaxial structure constructed and arranged to convey RF (radio frequency) signals between the first and second circuit portions. Embodiments are directed to both the integrated circuit assembly and to a method of manufacturing the integrated circuit assembly. |
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22.07.2026 · NXP B.V.
Verfahren zum Aufbau eines Multihop-Uwb-Netzwerks
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Zusammenfassung
The present disclosure provides a method of building a UWB network, comprising a plurality of spatially-separated UWB nodes, wherein the plurality of UWB nodes comprises a gateway node and a plurality of non-gateway nodes, the method comprising; identifying at least one gateway-neighbouring node; setting the gateway node into a two-way ranging, TWR, controller mode to provide for transfer of data to each of the identified gateway-neighbouring nodes; for at least a first gateway-neighbouring, FGN, node: identifying, if available, at least one FGN-child node; setting the FGN node into a TWR controller mode to provide for transfer of data to each of the identified FGN-child nodes, wherein the operation of each node in its respective TWR controller mode is non-contemporaneous with the operation of any of its neighbouring nodes in their respective TWR controller mode. |
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15.07.2026 · NXP B.V.
Steuergerät, Fahrzeug und Verfahren
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Zusammenfassung
The present disclosure relates to a controller configured to: receive a channel impulse response from a UWB node operating in a radar mode, wherein the UWB node is mounted in a vehicle and directed towards a traversal surface of the vehicle such that the channel impulse response is indicative of reflections of a radar signal from the traversal surface; characterise an irregularity in the traversal surface based on the received channel impulse response and one or more signature channel impulse responses, CIRs, wherein each of the signature CIRs are indicative of an irregularity which may be identified in the CIR of the UWB node. |
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15.07.2026 · NXP B.V.
Halbleiterbauelement und Verfahren dafür
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Zusammenfassung
A method of manufacturing a semiconductor device is provided. The method includes affixing a plurality of semiconductor die on a first major side of a leadframe having a plurality of package sites, each semiconductor die affixed at a respective package site, the leadframe selectively plated such that un-plated regions are formed between the package sites. An encapsulant encapsulates the plurality of semiconductor die and the first major side of the leadframe. A second major side of the leadframe is exposed through the encapsulant. The un-plated regions are etched from the second major side of the leadframe to electrically isolate each package site from one another. |
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08.07.2026 · NXP USA, Inc.
Halbleiterpackung und Verfahren zu Ihrer Herstellung
Halbleiter & Elektrische Bauelemente
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Zusammenfassung
The present specification relates to package semiconductor devices and methods of manufacture thereof. According to a first aspect of the present disclosure, there is provided a packaged semiconductor device comprising a semiconductor die, a first molding compound encapsulating the semiconductor die, a first set of interconnecting solder balls, at least one redistribution layer, such redistribution layer connecting the semiconductor die to the interconnecting solder balls. The packaged semiconductor device further comprises at least one channel extending from the at least one redistribution layer to an exterior of the packaged semiconductor device wherein the at least one redistribution layer comprises pipes coupled to the at least one channel, such pipes transporting steam or moisture or thermal fluids from the at least one channel to the at least one redistribution layer or from the at least one redistribution layer to the at least one channel. |
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08.07.2026 · NXP USA, Inc.
Automobilradar mit Vererbter Apodisierungs-Spararray-Verarbeitung zur Schätzung der Ankunftsrichtung
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Zusammenfassung
A system and method is presented for determining a plurality of MIMO virtual antenna arrays. Each virtual antenna array of the plurality of MIMO virtual antenna arrays is associated with a subset of a plurality of transmit antennas (102) and a subset of a plurality of receive antennas (104). Signals received by the plurality of receive antennas are used to determine signal spectrums (208) for each MIMO virtual antenna array of the plurality of MIMO virtual antenna arrays. Each signal spectrum includes signal magnitude values and has associated angle values, wherein main lobe (210) positions of the signal spectrums of the plurality of MIMO virtual antenna arrays are at a same angle across all signal spectrums and sidelobe (212) positions of the signal spectrums are not at the same angle across all signal spectrums. A first combined MIMO virtual antenna array signal spectrum (409) is determined by combining minimum values of the signal spectrums at each angle value. The first combined MIMO virtual antenna array signal spectrum is used to detect an object. |
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08.07.2026 · NXP USA, Inc.
Geformte Vorrichtungsverpackungen mit Kapazitiven Strukturen
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Zusammenfassung
One or more integrated capacitors can be formed within the molding material(s) of a molded electronic device package. An electronic device such as a semiconductor die is surrounded by a first volume of molding material and a first capacitor plate is formed on a top surface of the first volume of molding material above the electronic device. A second volume of molding material is formed above the first capacitor plate and a second capacitor plate is formed on a top surface of the second volume of molding material which separates the second capacitor plate from the first capacitor plate. |
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Vertretene Patentanmelder
Die Patentanmelder, die Colaiuda, Antonella in den erfassten Patenten am häufigsten vertritt.
| Anmelder | Anzahl Patente |
|---|---|
| 1. NXP Semiconductors | 82 |
| 2. NXP USA | 62 |
| 3. Technische Universiteit Delft | 1 |
| 4. Technische Universiteit Eindhoven | 1 |
Patente nach Jahr
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